技术参数

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 5A (Tj)
• Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
• Rds On (Max) @ Id, Vgs 45mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id 2.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 1W
• Operating Temperature 150°C
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SOT-23
• Package / Case TO-236-3, SC-59, SOT-23-3
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095