- Product Model K4B4G1646E-BYK000
- Brand Samsung Semiconductor, Inc.
- RoHS Yes
- Description DDR3-1600 4GB (256MX16)1.25NS CL
- Classification Memory
Inventory:1500
Technical Details
- Part Status Active
- DigiKey Programmable Not Verified
- Memory Type Volatile
- Memory Format DRAM
- Memory Size 4Gbit
- Memory Organization 256M x 16
- Memory Interface Parallel
- Clock Frequency 800 MHz
- Voltage - Supply 1.35V
- Operating Temperature 0°C ~ 95°C
- Mounting Type Surface Mount
- Package / Case 96-TFBGA