Technical Details

• Part Status Not For New Designs
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
• Rds On (Max) @ Id, Vgs 300mOhm @ 400mA, 4.5V
• Vgs(th) (Max) @ Id -
• Vgs (Max) ±12V
• Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 500mW (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SOT-23
• Package / Case TO-236-3, SC-59, SOT-23-3