Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
• Rds On (Max) @ Id, Vgs 5Ohm @ 10mA, 4.5V
• Vgs(th) (Max) @ Id 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 0.18 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 6.5 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 400mW (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SOT-23 (TO-236)
• Package / Case TO-236-3, SC-59, SOT-23-3