Technical Details

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
• Rds On (Max) @ Id, Vgs 5Ohm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id 1.2V @ 250µA
• Vgs (Max) ±8V
• Input Capacitance (Ciss) (Max) @ Vds 34 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 350mW (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SOT-323-3A
• Package / Case SC-70, SOT-323